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Silicon carbide (SiC) power switches such as JFET or MOSFET have demonstrated their superior advantages over silicon (Si) power devices such as IGBT, especially in terms of significantly reduced switching losses. A major issue facing large scale adoption of SiC power devices is still the much higher cost. This paper proposes that Si/SiC hybrid power module (HPM) should be a natural next step moving...
Silicon carbide (SiC) power switches such as MOSFET or JFET have demonstrated their superior advantages over silicon (Si) power devices such as IGBT, especially in terms of significantly reduced switching losses. A major issue facing large scale adoption of SiC power devices is still the much higher cost. This paper proposes that Si/SiC hybrid switch should be a natural next step moving forward for...
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