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This is the first study to successfully achieve record DNA sensitivity (sub-ƒM) by self-aligned, maskless, dual-channel, and metal-gate-based thin-film transistor nano-wire FET. Both novel device architecture (dual-channel) and optimization of integration processes (microcrystalline silicon and self-aligned sidewall sub-50 nm critical dimension) of nano-wire FET enhance the sensitivity to biological...
A new gate controlled bipolar transistor is introduced in this paper which combines the lateral and vertical bipolar effect in standard NMOS device in a 90 nm triple well process technology. A current gain of more than 200, cut off frequency of about 7 GHz, and lower flicker noise compared with CMOS devices were achieved without any change to process and/or introduction of any extra masking step....
This study investigates a high Q-factor spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process. The spiral inductor is manufactured on silicon substrate using the 0.35 mum CMOS process. In order to reduce the substrate loss and enhance the Q-factor of the inductor, silicon substrate under the inductor is removed using a post-process. The post-process...
The fabrication of a micromachined radio frequency (RF) switch using the commercial 0.35 mum complementary metal oxide semiconductor (CMOS) process and a post-process has been implemented. The RF switch, which is capacitive shunt type, is composed of coplanar waveguide (CPW) transmission lines, supported springs and a suspended membrane. The post-process requires only a wet etching sacrificial layer,...
A fully integrated 3-to-5 GHz CMOS mixer for UWB system is presented in this paper. The designed mixer utilizes a dynamic injection circuit to reduce noise figure. In order to adjust the conversion gain, linearity, and noise figure easily, we connect a capacitor and a resistor in series between the drain and the gate of a NMOS transistor. A designed active balun which converts the single-ended input...
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