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We demonstrate resistive random access memory (RRAM) architecture with bi-layered switching element for reliable resistive switching memory. Based on the modulated Schottky barrier modeling, several key functions to achieve a realiable bipolar switching property are extracted. Our device shows an excellent memory performance such as enduracne of 1011 cycles at 30ns, data retention of >104s at 200°C,...
We first present a parallel multi-confined (PMC) cell structure on single contact was successfully integrated by using CVD PCM process. PMC cell shows the discrete four resistance levels with increasing applied current, and its middle resistances (D01, D10) have the low drift coefficient under 0.007. The four resistance levels were maintained up to 2E5 cycles. From simulation results, PMC cell structure...
Vertically defined resistance change memory cells for the vertical cross-point architecture (VCPA) as a high density non-volatile memory application are successfully demonstrated with a NiO switching layer. They showed both unipolar and bipolar switching mode. Several issues in realization for VCPA and their possible solutions are discussed.
A 3-D flash memory cell of VRAT (vertical-recess-array-transistor) has been fabricated using a unique and simple 3-D integration method of PIPE (planarized integration on the same plane), which allows for the successful implementation of ultra high density flash memory. In addition, procedures to increase the memory density further using another advanced structure, Zigzag-VRAT (Z-VRAT), are developed.
Feasibility of the multi-layer cross-point structured binary oxide resistive memory (OxRRAM) has been tested for next generation non-volatile random access high density data storage application. Novel plug contact type bottom electrode (plug-BE) could reduce active memory cell diameter down to 50nm with smaller operation current and improved switching distributions. With 2 additional masks, one layer...
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