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A 700-V class Reverse-Blocking IGBT (RB-IGBT) is developed for large capacity power supply applications inevitably accompanied with increasing parasitic inductance and high current slew rate relative to their medium capacity counterparts. Compared with 600-V RB-IGBT, the device allows high dynamic surge voltage and fast switching to reduce turn-off loss by 35% under an advanced T-type-NPC three level...
We propose an indoor visible light communication system model in the paper. By researching several kinds of commonly used modulation methods through the analysis of two channels: diffuse and LOS channels, we established a general indoor visible light communication transmission model and the corresponding modulation communication mode under the condition. A solution to improve intersymbol interference...
We introduced a wireless optical communication system in this paper. Through the analysis of two main channels in the system: diffuse channel and light of sight (LOS) channel, we researched the influence of the multipath effect on the optical power distribution of the system and the influence of the SNR of the system under a given transmission rate. The method of reasonable layout of the LED array...
Wireless Sensor Network as an important technology of Internet of things' development, is more and more widely used in various research fields. This paper mainly researches the part of localization application based on wireless sensor network, focuses on DV-Hop localization algorithm, and gives its algorithm simulation and analysis of the simulation results. Also this paper improves the algorithm...
We newly developed a 1200V Reverse Blocking (RB)-IGBT used to form bi-directional switches in advanced Neutral-Point-Clamped (A-NPC) 3-Level modules. It featured a hybrid through-silicon isolation structure combining wafer front-side boron deep diffusion with back-side V-groove etching. Collector layer was implanted into the back-side and the surface of the V-grooves, and electrically connected to...
This work reports a SOI LIGBT with hole-bypassing gate configuration and oxide trench in drift region that reduces the device pitch to approximately the half of the conventional LIGBTs. The device shows a specific on-resistance of 330 mOmegamiddotmm2 that reaches the silicon-limit at 200V breakdown voltage, at an effective gate drive of 4.0V and a current density of 1000A/cm2 . The proposed device...
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