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A 700-V class Reverse-Blocking IGBT (RB-IGBT) is developed for large capacity power supply applications inevitably accompanied with increasing parasitic inductance and high current slew rate relative to their medium capacity counterparts. Compared with 600-V RB-IGBT, the device allows high dynamic surge voltage and fast switching to reduce turn-off loss by 35% under an advanced T-type-NPC three level...
We newly developed a 1200V Reverse Blocking (RB)-IGBT used to form bi-directional switches in advanced Neutral-Point-Clamped (A-NPC) 3-Level modules. It featured a hybrid through-silicon isolation structure combining wafer front-side boron deep diffusion with back-side V-groove etching. Collector layer was implanted into the back-side and the surface of the V-grooves, and electrically connected to...
This work reports a SOI LIGBT with hole-bypassing gate configuration and oxide trench in drift region that reduces the device pitch to approximately the half of the conventional LIGBTs. The device shows a specific on-resistance of 330 mOmegamiddotmm2 that reaches the silicon-limit at 200V breakdown voltage, at an effective gate drive of 4.0V and a current density of 1000A/cm2 . The proposed device...
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