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2-transistor (2T) cell technology used for embedded non-volatile memory (eNVM) has been scaled down to 40nm node. To enable aggressive cell scaling, the array architecture is modified compared to previous generations and the channel length of cell is drastically reduced requiring steep cell junctions, which give rise to new disturb phenomena. This paper describes how to safeguard the drain disturb...
This paper proposes a parallel architecture with resistive crosspoint array. The design of its two essential operations, Read and Write, is inspired by the biophysical behavior of a neural system, such as integrate-and-fire and time-dependent synaptic plasticity. The proposed hardware consists of an array with resistive random access memory (RRAM) and CMOS peripheral circuits, which perform matrix...
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