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Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer...
The charge storage and retention characteristics of a nanoparticle-laden thin polyimide film were investigated for application in non-volatile memory devices. Well-dispersed and uniform sized metallic copper nanoparticles (CuNPs) were formed as embedded entities within the confines of polyimide film that was cast from solution. The nanoparticle-containing films were characterized by X-ray photoelectron...
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