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The thickness effect of In-Ga-Zn oxide (IGZO) semiconductor layer is investigated for pH sensing in light-addressable potentiometric sensor (LAPS). pH sensing membrane is 45 nm-thick NbOx, which is directly on IGZO/ITO/glass substrate. The thickness of IGZO layer is determined by time-mode control in reactive rf sputtering. The highest photovoltage and operation frequency can be obtained in the IGZO...
In this study, the hydrogen ion and potassium ion sensing properties of mixing hafnium oxide-tungsten oxide (HfxWyOz) membranes on an electrolyte-insulator-semiconductor (EIS) structure by co-sputtering method were investigated. For tungsten oxide, the increasing of pH-sensitivity (35.47 mV/pH to 46.22 mV/pH), linearity (98.11% to 99.87%), measuring range (pH 6-pH 12 to pH 2-pH 12) and the decreasing...
In this study, a novel approach for realization of an inorganic ISFET/REFET system was presented. Single Si3N4 layer was used as the sensing membrane of EIS structure directly on n and p type substrate. The differential pH sensitivity of them is 25.1 mV/pH, and the linearity is higher than 99%. The drift effect for the single Si3N4 EIS structures could be minimized to around 1 mV/h by this differential...
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