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In article number 1706950, Joshua A. Robinson and co‐workers demonstrate in‐situ Re doping of synthetic monolayer MoS2 with ≈1 at% Re on r‐plane sapphire. Electronic measurements and density functional theory calculations show that 1 at% Re doping achieves nearly degenerate n‐type doping. Low‐temperature photoluminescence reveals a suppression of defect emission, resulting from the passivation of...
Doping is a fundamental requirement for tuning and improving the properties of conventional semiconductors. Recent doping studies including niobium (Nb) doping of molybdenum disulfide (MoS2) and tungsten (W) doping of molybdenum diselenide (MoSe2) have suggested that substitutional doping may provide an efficient route to tune the doping type and suppress deep trap levels of 2D materials. To date,...
Graphene has been proposed as a high-quality contact to two-dimensional (2D) transition metal dichalcogenides (TMDs) for the development of “all 2D” devices. Here, we demonstrate the direct-growth of epitaxial graphene (EG) based lateral heterostructures where the EG acts as a directly grown contact to a molybdenum disulfide (MoS2) channel. Utilizing a “seed-free” process, the nucleation of MoS2 occurs...
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