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A write-once–read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal–insulator–metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished...
Based on the retention failure mechanism of high resistance state due to reconstruction of oxygen vacancy filament in the rupture region, a physical model is proposed to quantify the retention failure behavior of oxide-based RRAM devices, supported by experiments. A new data retention evaluation methodology is proposed to predict the failure probability and lifetime of the memory devices.
A new current sweep measurement method is introduced to investigate the details of the set process. The electrode-dependent current compliance failure phenomenon is investigated in oxide-based resistive switching memory. The results indicate that the amount of conductive filaments formed in the oxide layer is the critical factor that influences the set behavior (sudden or slowly) and causes the compliance...
The possibility of using polymer or organic films for photovoltaic or electret devices has been investigated by many investigators(1–5). In general, the open-circuit photovoltage in photovoltaic devices is much smaller than the potential difference across the energy gap of the materials if the mechanism responsible for the photovoltaic effects is due either to Schottky barrier, or to p-n junction...
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