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Self-heating (SH) has emerged as an important performance, variability, and reliability concern for floating body transistors (FB-FET), namely, extremely-thin-silicon-on-insulator (ETSOI), SOI-FinFET, gate-all-round NW-FET (GAA-FETs), etc. The floating body topology offers electrostatic control, but restricts heat outflow: apparently an intrinsic trade-off. In this paper, we trace the trajectory of...
In this paper, we present first demonstration of InGaAs-on-insulator (-OI) MOSFETs with wafer size scalability up to Si wafer size of 300 mm and larger by direct wafer bonding (DWB) process using InGaAs channels grown on 4-inch Si donor substrates with III–V buffer layers instead of InP donor substrates. It is found that this DWB process can provide the high quality InGaAs thin films on Si. The fabricated...
MOSFETs using channel materials with low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime [1, 2]. From this viewpoint, attentions have recently been paid to III-V and Ge channels. This is because III-V semiconductors have extremely high electron mobility and low electron effective mass and Ge has extremely high...
We report the first demonstration of sub-60 nm deeply-scaled InGaAs- and InAs-on-insulator MOSFETs on Si substrates with MOS interface buffer engineering and Ni-InGaAs metal source/drain (S/D). The devices provide 400 % Ion enhancement, when comparing to that of an In0.53Ga0.47As control device with the same drain-induced-barrier-lowering (DIBL) of 100 mV/V, which is attributable to the mobility enhancement...
We demonstrate room temperature continuous wave lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars. Single-cell high-Q photonic crystal cavities are formed with nanopillars by selective-area epitaxy. Control of the nanopillar geometry and heterostructures allows for high-Q and large confinement factor, resulting in a low threshold power density of 75 W/cm2 at 1040...
We report the demonstration of photonic crystal lasers formed bottom-up by patterned III-V nanopillar (NP) arrays. In this work, we present a method whereby the photonic band gap region and active gain regions are formed simultaneously by selective-area metal-organic chemical vapor deposition. This approach allows us the ability to design device parameters lithographically. By accurate control of...
A new low cost flip chip (LCFC) packaging solution is developed that dramatically reduces flip chip package cost. The solution entails innovations and improvements in the bump, interconnect structure, substrate design and underfilling process. Cu column bumps with solder caps are used to form a “Bump on Lead (BOL)” interconnection with narrow substrate pads with no solder mask confinement (“open solder...
We present the systematic study of the growth mechanism of ZnO nanorods grown on Al2O3 substrates with ZnO homo-buffer, n-GaN and p-GaN interlayers. Vertically aligned ZnO nanorods with diameter of 50 nm and lengths of range of 0.1 - 2 mum were synthesized at the substrate temperature of 350 - 500degC by catalyst-free metal-organic chemical vapor deposition. A thin ZnO film was observed underneath...
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