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The photoelectric characteristics of transparent ZnO films have been investigated. The possibility of controlling the conductivity by the introduction of impurities is presented. The ratio of conductivities of the films doped with donor and acceptor impurities reaches value of 109. It is shown that it is possible to achieve a significant increase in the ratio of photoconductivity to the dark conductivity...
The memristor memory cell ReRAM was developed and investigated. The developed structure consists of a Schottky diode (1D) based on the ZnO:Ga/ZnO:Li/ZnO heterostructure and the memristor (1R) based on the Pt/ZnO/ZnO:Li/Al heterostructure. Thus, the unipolar memristor memory cell of 1D1R type was obtained. The heterostructures were created by the vacuum electron-beam evaporation method. The laboratory...
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