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The parasitic parameters and equivalent electrical model of differential dielectric-cavity through-silicon via (DDC-TSV) array on traditional low-resistivity silicon (LRSi) are proposed in this letter. TSV plugs are placed in the dielectric-cavity etched on LRSi. Each analytical formula in the model is established as the fuction of various physical geometries. The resistance–inductance–capacitance–conductance...
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