The parasitic parameters and equivalent electrical model of differential dielectric-cavity through-silicon via (DDC-TSV) array on traditional low-resistivity silicon (LRSi) are proposed in this letter. TSV plugs are placed in the dielectric-cavity etched on LRSi. Each analytical formula in the model is established as the fuction of various physical geometries. The resistance–inductance–capacitance–conductance model and S-parameters of the DDC-TSV array are constructed by the Advanced Design System (ADS), which is verified by the 3-D full-wave electromagnetic solver High Frequency Simulator Structure (HFSS). Simulation results of the ADS and HFSS accord well with each other with frequencies up to 100 GHz, which shows good accuracy of the proposed model.