The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Device parameter mismatch is considered as one of the major obstacle for continuing MOS transistor miniaturization following Moore's law. As an efficient and accurate doping technique, ion implantation technology is an essential instrument for designing device parameter. this paper summarizes the device mismatch root causes and reviews some research results from the previous works. Device mismatch...
A vertical pnp BJTs on thin SOI is designed and characterized by using the mixed numerical two-dimensional process and device simulator (Sentaurus). The DC, frequency, and breakdown characteristics of the vertical pnp on SOI are simulated and analyzed. The peak of β is 85 at Vbe=-0.7. The maximum of the cutoff frequency fτ for the pnp bipolar transistor on SOI attain 10.6 GHz, and the value of BVceo...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.