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In this paper, Spread Spectrum Time Domain Reflectometry (SSTDR) has been implemented for the first time across the gate and the source of a power metal oxide semiconductor field effect transistor (MOSFET) to perform the online degradation monitoring of switching devices as well as the overall converter. To accomplish this, the SSTDR test signal is superimposed with the pulse width modulated (PWM)...
In this paper, the degradation at the gate oxide layer of a SiC MOSFET has been studied. The online condition monitoring was achieved by Spread Spectrum Time Domain Reflectometry (SSTDR) for the first time in SiC based devices. An accelerated aging station was built to age the power semiconductor devices in a standardized way, and power cycling test was performed to induce degradation. Finally, the...
In today's IVHM system, diagnostics and prognostic play a crucial part in the system safety while reducing the operating and maintenance costs. Structural health management is a vital part of IVHM as arguably structures are the biggest and most costly part of the system, thus the failure of the structure could lead to catastrophic results. The failure of a structure is usually caused by cracks or...
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