The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The variation of switching parameters in RRAM is impacted by the resistance states through a statistical analysis. We proposed some improved program/erase (P/E) methods to precisely control the fluctuation of the resistance states. In DC P/E operation, combing current-sweep-induced gradual SET and voltage-sweep-induced gradual RESET, uniform resistance states can be achieved. In pulse P/E operation,...
There have been concerns about how far the floating gate based non-volatile flash memory (NVM) can be extended and what will become the future directions of memory development. Several emerging new memories, including magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase-change random access memory (PRAM) and resistance random access memory (RRAM), were studied as...
ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching...
Memristor has been extensively investigated as the fourth fundamental circuit element. A common material in fabricating memristors is titanium oxide. The growth of titanium oxide has so far been focused on atomic layer deposition or sputtering, which is expensive. In this paper, a low-cost memristor device is demonstrated based on titanium oxide, grown by the thermal oxidation of deposited Ti film...
We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO2:Cu/Pt shows excellent nonpolar resistive switching behaviors, such as free-electroforming, high ON/OFF resistance ratio (106), fast Set/Reset speed (50 ns/100 ns), and reliable data retention (>10 years). The temperature-dependent switching characteristics...
The self-rectifying resistive switching behavior is investigated in the Au/ZrO2: nc-Au/n+ Si sandwich structure with the Au nanocrystals embedded ZrO2 films (ZrO2: nc-Au) fabricated by e-beam evaporation. The rectification ratio is obtained to be 7??102 under ??0.5 V at low-resistance state (LRS), which can alleviate the cross talk effect in crossbar structure arrays without additional switching elements...
In this letter, we fabricate Cu/ZrO2:Au/Pt and Cu/ZrO2:Ti/Pt devices via implanting Au or Ti ions. We systematic investigate the resistance switching properties of the two types of metal doped ZrO2-based resistance random access memory. Compared with the undoped (Cu/ZrO2/Pt) device, the metal doped devices show free-electroforming process, narrow distribution of the switching parameters and high device...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.