The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si2H6 passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400 °C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a...
We report a novel common gate stack solution for Ge1−xSnx P-MOSFET and In0.7Ga0.3As N-MOSFET, featuring sub-400 °C Si2H6 passivation, sub-1.3 nm EOT, and single TaN metal gate. Symmetric VTH, high performance, low gate leakage, negligible hysteresis, and excellent reliability were realized. Using this gate stack, the world's first GeSn short-channel device with gate length LG down to 250 nm was realized...
We report high-performance p-channel -gate germanium (Ge) p-channel multigate field-effect transistor (MuGFET) with low-temperature surface passivation and Schottky-barrier nickel germanide (NiGe) metallic source/drain, fabricated on high-quality germanium-on-insulator (GeOI) substrates using sub-400 process modules. As compared with other reported...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.