The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The performance of high power photodiodes flip-chip bonded on multi-crystal aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance of submount-Ti interfaces was measured and found to be the primary impedance to heat dissipation.
The performance of high-power photodiodes flip-chip bonded on polycrystalline aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance (inverse of the thermal boundary resistance) between submount/titanium interfaces was measured and found to be the primary impedance to heat dissipation. Thermal profiles of the flip-chip-bonded devices were simulated...
We demonstrate InP-based high power modified uni-traveling carrier photodiodes heterogeneously integrated on silicon on diamond (SOD) waveguides. These photodiodes reach 20 nA dark current at −5 V bias voltage. A 50 μm long device exhibits an internal responsivity of 1.07 A/W. The bandwidths of the devices with 14×25 μm2, 14×50 μm2, 14×100 μm2 and 14×150 μm2 area are 22 GHz, 16 GHz, 10 GHz and 7 GHz,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.