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The technology of the growth of Si, Ge, and Si1–xGex layers by molecular-beam epitaxy with the use of a sublimation source of monoisotopic 30Si or 28Si and/or gas sources of monogermane 74GeH4 is demonstrated. All of the epitaxial layers are of high crystal quality. The secondary-ion mass spectroscopy data and Raman data suggest the high isotopic purity and structural...