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When applying high-temperature superconductor (HTS) devices in power systems, ac loss is a significant obstacle from an economic perspective. Many studies have been performed to investigate this issue, but the ac losses for different current waveforms have rarely been reported. However, in power systems, many nonlinear devices can distort current waveforms. For example, currents of converters have...
Cooling was a very effective way to eliminate the bow of Silicon solar cell. In this paper, by a series of experiments, we found that during the cooling, the electrical characteristics and internal or external quantum efficiency nearly stayed the same, and the lifetime of minority carriers as well. The cooling was a available way to apply in industrial process.
We present an improved procedure for extracting parasitic capacitance parameters and gate current parameters for MOSVAR, the industry standard MOS varactormodel. Our technique is verified against measured data from three technology nodes (180 nm, 130 nm and 65 nm), and is also used to validate the MOSVAR P-gate/P-well tunneling current sub-model.
We report a bias-dependent, nonlinear body resistance model suitable for accurate characterization of PD/SOI technology. This model is implemented in the surface potential based SOI MOSFET compact model PSP-SOI and experimentally verified for 65 nm PD/SOI technology node.
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