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The carbon was incorporated in biaxial st-Si (stained Si) source/drain NMOSFET for channel strain enhancement. Due to ~52% lattice mismatch between silicon and carbon, the st-Si:C surface channel is under higher strain than that of st-Si, indicating that the carrier mobility can be enhanced significantly by theory. The resistance of st-Si:C with carbon increasing are similar with st-Si, and improved...
Static negative and positive Bias Temperature Instability (BTI) in p-channel polycrystalline silicon thin-film transistors has been studied. However, dynamic stress condition is similar to the real operation. After dynamic BTI stress, the current increases initially and drops significantly (~0.1x) after long time stress. The change of ION is more serious for higher frequency, higher amplitude or shorter...
In this paper a-Si:H TFTs with the external the mechanical strain and bending cycles is studied. In addition, the trap states distribution is also discussed. Besides, the temperature distribution of a-Si:H TFTs on plastic substrate is an important issue for operation. A thermal conduction layer dissipates the accumulated heat during operation is designed and it calculates the temperature distribution...
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