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Edge-emitting semiconductor lasers having a highly-asymmetric vertical waveguide are presented. Ridge-waveguide lasers provide record single-transverse mode power of 2.1 W with a maximum brightness of 50 MWcm−2 sr−1, operating current independent ultra-low astigmatism of only 2.5 μm and beam divergence angle of 9° × 10°.
xBa0.95Sr0.05TiO3–(1 − x)BiFe0.9Gd0.1O3 [xBST–(1 − x)BFGO] (x = 0.00, 0.10, 0.20 and 0.25) multiferroic ceramics were prepared by the standard solid-state reaction technique. Structural characterization was performed by X-ray diffraction. All the samples showed rhombohedral distorted perovskite structure. Surface morphology of the ceramics was studied by the field emission scanning electron...
Picosecond optical pulse generation based on photonic band crystal lasers is a very promising application of this novel laser type. Mode-locking and direct modulation performance of lasers with different structure designs will be presented.
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