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The effect of process temperature and reaction cycle number on atomic layer-deposited TiO2 thin films onto Si(100) using TiCl4 and H2O precursors was investigated in order to discuss the correlation between the growth per cycle (GPC), film structure (crystallinity), and surface roughness as well as the dependence of some of these properties with gas phase environment such as HCl by-product. In this...
TiO2 thin films were deposited on FTO glass by ALD technique using titanium tetrachloride and water as precursors. A thorough investigation of the TiO2/FTO film properties was carried on, varying the process temperature in the range (150–400) °C and keeping fixed at 2000 the number of reaction cycles. TiO2 films were also grown on Si(100) and glass substrates for some comparisons. RBS, GIXRD, Raman...
This paper discusses about the effect of substrate type on structure of titanium dioxide deposited by atomic layer deposition using titanium tetrachloride and deionized water as precursors. The substrates investigated are silicon (100) and cover glass, and the depositions were made at temperatures of 300°C and 450°C. We observed through Rutherford backscattering spectrometry that the TiO2 thin films...
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