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An energy harvesting capable pixel is designed in 90 nm standard complementary metal oxide semiconductor (CMOS) technology with the spectral response optimization considerations. The pixel can perform 2.22 nW power harvesting in 60 klx of illumination per pixel, while the pixel itself consumes 56.26 pW power. Moreover, the pixel could achieve 1.70 μV⁄e− conversion gain and 60.72 dB of dynamic range...
A new pixel is designed with the capability of imaging and energy harvesting for the retinal prosthesis implant in 0.18 µm standard Complementary Metal Oxide Semiconductor technology. The pixel conversion gain and dynamic range, are 2.05 $$\upmu{\text{V}}/{\text{e}}^{ - }$$ μ V / e - and 63.2 dB. The power consumption 53.12 pW per pixel while energy harvesting performance is 3.87 nW...
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