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This paper reports on the effects of the Halo structure variations on threshold voltage (V th ) in a 22nm gate length high-k/metal gate planar NMOS transistor. Since the V th is one of the important physical parameter for determining the functionality of complementary metal-oxide–semiconductor device, this experiment will focus on finding the best combination on process parameter to...
This paper describes growth process of the two silicide Sub-nanometer devices and the different effects of having cobalt silicide and titanium silicide on a Sub-nanometer CMOS devices. On the top of CMOS device gate, metal silicide is developed on-top of the polysilicon to produce an ohmic contact between the polysilicon and aluminum wire. The ohmic contact should be better compared to metal-polysilicon...
In this paper we investigate the mechanism of local mechanical stress reduction in CMOS transistors by improving the Inter Layer Dielectric (ILD) process. We changed the Etch Stop Liner (ESL) from single stack silicon nitride (SiN) to dual stack ESL SiN/SiON. We then simulate the stress in 2D for both n-and p-channel MOSFET, and investigate how an oxynitride (SiON) buffer layer under the SiN ESL can...
In this paper we investigated the compressive stress in the channel induced by shallow trench isolation (STI) for different active length (Sa). We simulate both PMOS and NMOS for 130 nm gate length with five active lengths (Sa=0.34, 0.5, 0.8,1.0, 5.0 um) by using TCAD simulation and compare to experimental data from wafers fabricated using Silterra's 130 nm Technology. When the Sa is decreasing, Sxx...
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