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Boron carbide (B4C) and its in situ composites were synthesized via a simple bottom-up process using low-cost boric acid and a sucrose-based precursor solution with silicon (Si), titanium (Ti), or zirconium (Zr) species. The precursor solution was first dried at 250 °C and then heat-treated at 1650 °C for 90 min under argon and hydrogen gas flow. Free boron oxide phases appeared in the boric acid-rich...