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In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.
We reveal the dynamics of carrier-induced screening of the internal electric field in ZnO quantum wells. By controlling the potential profile of the quantum wells we demonstrate the ability to tune the excited state lifetimes.
We examine the dynamics of coherently coupled heavy hole excitons localized within spatially separated quantum wells with an energy difference equal to the LO phonon energy.
In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.
In this talk, main activities and progress in the areas of compound semiconductor quantum dots and nanowires, and device integration in Semiconductor Optoelectronics and Nanotechnology Group at the Australian National University will be addressed.
We have performed one and two colour, spectrally resolved four-wave mixing (FWM) experiments on a series of ZnO/Zn1-xMgxO quantum wells with different oxygen ion implantation doses. The results show that at room temperature and with resonant excitation, excitonic coherences are maintained beyond the duration of the laser pulse. A transient signal observed at negative delays in the two-colour experiments...
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs radial heterostructure nanowires, fabricated by metalorganic chemical vapour deposition. The effect of growth temperature on nanowire morphology is discussed. Strong photoluminescence is observed from GaAs nanowires with AlGaAs shells. Core/multishell nanowires, of GaAs cores clad in several alternating...
We have investigated the quantum well interdiffusion of Inx Ga1-xAs/InP QWs with different In composition using proton irradiation. 50 KeV proton implantation with various doses from 5times1014 H/cm2 with subsequent annealing at 750deg for 60 sec were used to induce the atomic intermixing process. Photoluminescence was performed to measure the bandgap energy shift between the unimplanted and implanted...
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the QW structure. The activation energy is similar to those obtained from SiO/sub 2/ cap annealed quantum well structures.
Summary form only given. We have demonstrated the growth of good quality, high reflectivity mirrors at wavelengths as low as 550 nm and electroabsorption between 580 and 540 nm in AlGaAs/AlAs MQWs. We present details on these and results on the characterization of the modulator grown by integrating the mirror and the MQW structures in a Fabry-Perot cavity.
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