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In sorghum (Sorghum bicolor [L.] Moench), the impact of heat stress during flowering on seed set is known, but mechanisms that lead to tolerance are not known. A diverse set of sorghum genotypes was tested under controlled environment and field conditions to ascertain the impact of heat stress on time‐of‐day of flowering, pollen viability, and ovarian tissue. A highly conserved early morning flowering...
A significant size effect on the mechanical properties of GaAs nanowires (NWs) is reported. A remarkable elastic strain of ≈11% for NWs with diameters of 50–150 nm and obvious plastic deformation in NWs with diameters ≤25 nm are revealed. The Young’s modulus of the NWs can be more than double that of bulk GaAs.
We review various III–V compound semiconductor nanowires grown by metalorganic chemical vapor deposition. Transmission and scanning electron microscopy, micro-photolumine-scence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and band structure.
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition (MOCVD). The grown nanowires are distributed uniformly and are vertical to the substrate. The coreshell nanowires have been structurally characterised by scanning electron microscopy and transmission electron microscopy.
This paper reports the growth of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostructures by MOCVD for applications in optoelectronics. Field emission scanning electron microscopy, low temperature photoluminescence, room temperature microphotoluminescence and transmission electron microscopy are used to characterize the nanowires.
In this talk, main activities and progress in the areas of compound semiconductor quantum dots and nanowires, and device integration in Semiconductor Optoelectronics and Nanotechnology Group at the Australian National University will be addressed.
The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs...
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