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Accurate positioning of semiconductor nanowires with lasing emission at room temperature at targeted locations, onto multiple substrates and forming complex spatial patterns is demonstrated using a novel nanoscale Transfer Printing technique.
We present a method to pattern the poly(ethylene oxide)/LiClO4 polymer electrolyte on the nm-scale by electron beam lithography. We use the patterned polymer electrolyte as a high capacitance gate dielectric for InAs nanowire transistors in a ‘wrap-gate’ geometry. Patterning enabled multiple independently controllable gates on the same device, which exhibit stability and subthreshold characteristics...
InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices...
We have studied the electronic transport characteristics of nanowire field effect transistors (NWFETs) made from phase-pure wurtzite (WZ) and zinc blende (ZB) InAs nanowires (NWs). The electronic characteristics were obtained at temperatures between 4 and 300 K. The ZB NWFETs exhibited a greater sensitivity to the surrounding atmosphere than WZ NWFETs. The WZ NWFETs had a higher mobility than ZB NWFETs...
Photoconductive terahertz detectors based on single GaAs/AlGaAs core-shell nanowire have been designed and fabricated. The devices were characterised in a terahertz time-domain spectroscopy system, showing excellent sensitivity comparable to the standard bulk ion-implanted InP receiver, with a detection bandwidth of 0.1 ∼ 0.6 THz. Finite-difference time-domain simulations were performed to understand...
In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I–V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED)...
We study the possibility of increasing the quantum efficiency of III–V semiconductor nanowire emitters using plasmonics. Results on the effect of plasmonic nanoparticle size, emitter-plasmonic nanoparticle distance and the initial quantum efficiency of the emitter on the quantum efficiency enhancement factor are presented.
Optical dipole nano-antennas are passive devices needing light from external sources. In this work, highly efficient coupling of light from microdisk lasers into plasmonic nano-antennas by using nano-tapers is proposed.
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