The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Nanowires show unique promise for a multitude of optoelectronic devices, ranging from solar cells to terahertz (THz) photonic devices. Here, we discuss how THz spectroscopy is guiding the development of such nanowire-based devices. As an example, we focus on developing nanowire-based THz polarization modulators.
We demonstrate an optical method to evaluate the doping concentration, internal quantum efficiency (IQE) and non-radiative lifetime of semiconductor nanowires, through power dependent photoluminescence (PL) and time resolved PL (TRPL) measurement. Combining this method with standard PL and time resolved spectrum, we analyse the quality, band structure and doping distribution of Si doped InP nanowires...
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.
The photocarrier lifetime within semiconductor nanowires is a critical parameter for optoelectronic applications. Here, we present a technique to determine the lifetime with picosecond resolution, revealing a 7.5 ps lifetime for GaAs nanowires.
We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.
In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.
The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the sub-picosecond lifetimes of these materials.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.