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Structures of SiO2/SiOx/SiO2 and SiO2/SiOx/SiO2/SiOx/SiO 2 have been prepared on Si wafers by ion beam sputtering deposition in ultrahigh vacuum (UHV) and subsequently annealed to form single-layer and doubly stacked Si nanocrystals (NCs). Using these two structures, nonvolatile Si-NC floating-gate nMOSFETs were fabricated at x=1.6 following 1.5-mum CMOS standard procedures. The Fowler-Nordheim tunneling...
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