The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have identified the microscopic structure of hydrogen donors in hydrogenated ZnO samples using near-edge x-ray absorption fine structure (NEXAFS) spectroscopy and ab initio multiple scattering calculations. We present the evidence of hydrogen occupying interstitial bond-centred locations where hydrogen atoms are attached to the host O atoms in bonds that are not parallel to the c axis. This work...
Formation of defects in hexagonal boron nitride (h-BN) under low-energy argon or nitrogen ion bombardment has been studied by near-edge X-ray absorption fine structure (NEXAFS) around boron and nitrogen K-edges and X-ray photoemission spectroscopy (XPS) from B1s and N1s core levels. Breaking of B–N bonds and formation of nitrogen vacancies have been identified in the B K-edge NEXAFS and B1s XPS measurements,...
We have studied formation of molecular nitrogen under low-energy nitrogen bombardment in a range of compound semiconductors by synchrotron-based X-ray photoelectron spectroscopy (XPS) around N 1s core-level and near-edge X-ray absorption fine structure (NEXAFS) around N K-edge. We have found interstitial molecular nitrogen, N 2 , in all samples under consideration. The presence of N 2...
Interaction of low-energy nitrogen ions (0.3–2keV N 2+ ) with GaAs (100) surfaces has been studied by X-ray photoemission spectroscopy (XPS) around N 1s and Ga 3d core-levels and near-edge X-ray absorption fine structure (NEXAFS) around the N K-edge, using synchrotron radiation. At the lowest bombardment energy, nitrogen forms bonds with both Ga and As, while Ga-N bonds form preferentially...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.