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This paper presents for the first time the extraction of chemical vapor deposition (CVD)-TiN and poly-Si work functions on atomic layer deposition (ALD)-HfO2 and high temperature SiO2 (HTO) for a wide range of EOT values. The measurements were performed on bevel oxide structures. Our results reveal that the work functions of both TiN and poly-Si gates highly depend on the underlying dielectrics especially...
Thermal stability of rare earth oxides La2O3/Y2O3 stack structure was studied. X-ray photoelectron spectroscopy (XPS) analysis revealed that Y2O3 layer suppresses the formation of SiO 2 at interface. It was found that mobility degradation in La-based gate dielectric MOSFETs during high temperature annealing can be prevented by inserting a thin Y2O3 interfacial layer
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