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This paper describes unseeded growth of poly-crystalline Ge with well-oriented large-size grains on insulator from amorphous Ge by scanning pulsed green laser annealing. The Ge was patterned to 2-µm-wide stripes and then annealed by laser irradiation. The annealed Ge stripes were crystallized with well-oriented (111) surface and the grain size was 2 µm wide and ∼10 µm long, where the maximum length...
CO2 laser was irradiated to per-hydro-polysilazane by us. Per-hydro-polysilazane as SiO2 precursor was spin-coated on the polycrystalline silicon substrate. CO2 laser was irradiated after prebaking Per-hydro-polysilazane film. Atomic force microscope analysis showed that the film after CO2 laser irradiation was formed flatly. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy...
Al2O3 thin films were deposited by plasma-assisted atomic layer deposition (PA-ALD), which can have the advantage of low temperature process. Then high pressure deuterium oxide annealing (HPDOA) was performed for reforming qualities of the PA-ALD Al2O3. The leakage current and the breakdown field of metal-oxide-semiconductor capacitors with the Al2O3 film as the gate insulator were improved after...
We investigated a quick patterning using gel-nanoimprint process for zinc oxide (ZnO) thin films. The X-ray diffraction measurement revealed that the ZnO films had wurtzite structure by annealing in the ambient air or oxygen. The ZnO film annealed in oxygen exhibited higher refractive index of 1.92 (at 720 nm for wavelength of light) which is close to that of a conventional ZnO film, whereas that...
The metal-induced lateral crystallization (MILC) of an amorphous Ge (a-Ge) thin film using Cu nanoparticles (NPs) was investigated. Cu-NPs were formed by a cage-shaped protein. After complete elimination of protein shell, crystal growth was performed at 300 °C. Raman spectra and TEM studies revealed that a poly-Ge film was formed at low temperature. The crystallization temperature depends on the metal-NP...
We investigated a quick patterning using a gel-nanoimprint process for zinc oxide (ZnO) thin films. The X-ray diffraction measurement revealed that the ZnO thin films had wurtzite structure by annealing in the ambient air or oxygen. The ZnO thin film annealed in oxygen exhibited higher refractive index of 1.92 (at 720 nm for wavelength of light) which is close to that of a conventional ZnO thin film,...
We investigated zinc oxide (ZnO) thin films prepared by plasma assisted atomic layer deposition (PA-ALD), and thin-film transistors (TFTs) with ALD ZnO channel layer for application in next-generation displays. In this study, we investigated the effects of the gate insulator properties on the performance of TFTs with a ZnO channel layer deposited by PA-ALD. The TFTs with Al2O3 gate insulator indicated...
We performed crystallization of an amorphous silicon by laser irradiation in flowing deionized-water where Nd: YAG THG laser (wave length = 355 nm) was used for annealing. As the results, we demonstrated that the underwater laser annealing (WLA) leads to giant- and uniform-grain growth as compared to laser annealing in air (LA). It is thought that the homogenization of the temperature distribution...
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