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We have demonstrated for the first time a remarkable reduction of current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) by high-pressure water vapor annealing (HPWVA). The device subjected to HPWVA exhibited considerably low dynamic ON-resistance ($R_{\mathrm{{\scriptscriptstyle ON}}}$ ), suggesting highly improved performance of these devices. Analyses of the results on normalized...
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