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This work presents a complementary metal-oxide-semiconductor-compatible top-down fabrication of Ge nanowires along with their integration into pMOSFETs with "HfO2/TaN" high-k/metal gate stacks. Lateral Ge wires down to 14 nm in diameter are achieved using a two-step dry etch process on a high-quality epitaxial Ge layer. To improve the interface quality between the Ge nanowire and the HfO...
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