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This paper reports the design and characterization results of a broadband, compact 140–170 GHz Double Side-Band (DSB) receiver fabricated in a 90nm SiGe process. The design is based on a balanced Gilbert cell, with on-chip integrated LO and RF baluns and an IF Variable Gain Amplifier (VGA). The receiver exhibits up to 7dB conversion gain with an RF bandwidth extending beyond the frequency range of...
The design of low distortion, high speed transceivers requires high performance Track and Hold Amplifier (THA) front ends to Analog to Digital Converters. This paper reports the design and characterization of a highly linear THA fabricated in 90nm SiGe Heterojunction Bipolar Transistor technology with Effective Number of Bits>4.9. Improved linearity is achieved through feed-through cancelation...
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