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We report on the small-signal high-frequency response of a GaNAsSb/GaAs pin waveguide photodetector at 1.55-μm wavelength. The GaNAsSb absorbing layer with 3.5% N and 18% Sb is sandwiched by GaAs-cladding layers. The device of an 8-μm ridge width and 15-μm ridge length has a dc responsivity of 0.44 A/W and an 11-GHz cutoff frequency at 5-mW optical illumination at a bias condition of -5 V. A higher...
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