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High-efficiency multifunction solar cells are attracting a great deal of attention for both space and terrestrial applications. We proposed the monolithic integration of the II/VI (ZnCdMg)(SeTe) and the III/V (InAlGa)(AsSb) material systems for multijunction solar cells. These material systems have direct bandgap, zinc blende, quaternary alloys, lattice-matched to GaSb substrates that cover the entire...
Under ambient conditions, the temperature sensitivity of 1.3 mum GaAsSb lasers is limited by non-radiative current losses. These are shown to be a critical design consideration for producing temperature insensitive VCSEL operation around room temperature.
Single-mode, continuous-wave, electrically-injected, GaSb based, 2.1 mum, equilateral-triangle-resonator lasers with a wavelength tuning range of 3.25 nm are demonstrated at 77 K.
We investigate a series of Ga(AsSb)/GaAs/AlGaAs quantum wells, that show an additional inplane confinement. This is attributed to the formation of self-organized GaAsSb quantum-islands during growth with confinement energies of several hundred meV.
InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.
An InGaAs light emitting diode monolithically integrated with a suspended lens is proposed as a prototype semiconductor electroluminescence refrigeration device. Simulations predict that a temperature drop up to 6degC is achievable in this device.
In spite of the almost ideal variation of the radiative current of 1.3 mum GaAsSb/GaAs-based lasers, the threshold current, Jth, is high due to non-radiative recombination accounting for 90% Jth near room temperature. This also gives rise to low T0 values ~60 K close to room temperature, similar to that for InGaAsP/InP
We report the first demonstration of CW operation of GaAsP/GaAs/GaAsSb QW lasers above room temperatures and show that the strain compensation improves the overall device performance
Room-temperature continuous wave operation of antimonide-based long wavelength VCSELs is reported. Power outputs up to 200 muW and wavelengths up to 1290 nm are achieved, making them suitable for optical data-communications applications
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