Search results for: Xiangquan Jiao

Items from 1 to 8 out of 8 results

article

Deposition of Tungsten Thin Films on Flexible Polymer Substrates by Direct-Current Magnetron Sputtering

Rui Zhang, Zhenxuan Huo, Xiangquan Jiao, Hui Zhong, more

Journal of Electronic Materials > 2015 > 44 > 11 > 4557-4562

We have investigated thin tungsten films deposited on polymer substrates by direct-current magnetron sputtering under different conditions. Unlike tungsten films deposited on rigid substrates, films on polymer substrates grew at appropriate sputtering power, low sputtering pressure, and low substrate temperature. High sputtering power results in tungsten films with good crystal orientation, compact...

article

AlN thin films deposited on different Si-based substrates through RF magnetron sputtering

Xiangquan Jiao, Yu Shi, Hui Zhong, Rui Zhang, more

Journal of Materials Science: Materials in Electronics > 2015 > 26 > 2 > 801-808

Various Si-based materials such as Si (100), Si (111), oxidized Si (SiO₂), and amorphous Si (α-Si) are used as substrates for the growth of c-axis-orientated AlN thin films using radio frequency magnetron sputtering. First, AlN is studied on various substrates under a fixed deposition condition. The results show that AlN deposited on monocrystalline silicon has different structures and stress properties...

article

Molybdenum deposited on Si (111), SiO2, and amorphous Si through RF magnetron sputtering

Xiangquan Jiao, Jie Yang, Rui Zhang, Nan Zhang, more

Materials Letters > 2014 > 124 > Complete > 318-320

Molybdenum (Mo) commonly serves as an electrode layer for the highly columnar growth of AlN piezoelectric thin films used to fabricate film bulk/surface acoustic resonators. The structure of the bottom Mo electrode directly influences the texture of the top AlN thin film, whereas the surface morphology and texture of the Mo electrode are inversely influenced by the substrate materials. In this study,...

article

Growth of AlN Films as a Function of Temperature on Mo Films Deposited by Different Techniques

Jie Yang, Xiangquan Jiao, Rui Zhang, Hui Zhong, more

Journal of Electronic Materials > 2014 > 43 > 2 > 369-374

The authors investigated the combined influences of substrate temperature and methods for preparing underlying Mo electrodes on the crystallinity, morphology, and electrical properties of AlN films using x-ray diffraction, scanning electron microscopy, and a network analyzer, respectively. The substrate temperature of the AlN films was varied from 20°C to 600°C. The underlying Mo electrodes were deposited...

article

Preparation of sacrificial layer for MEMS devices by lift-off technology

Jie Yang, Yu Shi, Hui Zhong, Xiangquan Jiao, more

Microsystem Technologies > 2014 > 20 > 2 > 259-263

To simplify the preparation of sacrificial layer in micro-electromechanical system structure, new processes have been developed. By using lift-off technology, sacrificial layer was selectively deposited into the pit that prepared for sacrificial layer releasing. Then a short time polishing process was used to remove the burrs around the pit. This method offers several advantages including reducing...

article

Electromagnetic properties of Nb₂O₅ substituted ferroelectric–ferromagnetic composite ferrite

Hui Zhong, Zhanfei Xiao, Jie Yang, Xiangquan Jiao, more

Journal of Materials Science: Materials in Electronics > 2013 > 24 > 4 > 1116-1120

This work presents the influence of Nb₂O₅ additions on the ferroelectric–ferromagnetic composite material. We studied the electromagnetic properties depended on Nb₂O₅ content and the sintering temperature. Results show an increasing initial permeability and a decreasing dielectric loss with the increase of Nb₂O₅ content. Quality factor has a complicated change trend with the increasing Nb₂O₅ at different...

article

Residual stress of AlN films RF sputter deposited on Si(111) substrate

Hui Zhong, Zhanfei Xiao, Xiangquan Jiao, Jie Yang, more

Journal of Materials Science: Materials in Electronics > 2012 > 23 > 12 > 2216-2220

AlN films with (002) crystal orientation are widely used in various resonator-based applications. Low intrinsic stress is one of the important requirements for the thin film stacks employed in electroacoustic devices. In this paper, AlN films were deposited by reactive radio frequency (RF) sputtering with various conditions. The effects of N₂ concentrations, sputtering pressure, substrate temperature,...

article

Microwave dielectric properties of BaO–TiO₂–TeO₂ ternary system

Xiangquan Jiao, Chaowei Zhong, Shuren Zhang, Xingshu Liu, more

Journal of Materials Science > 2010 > 45 > 12 > 3331-3335

Besides the applications as optical functional materials, tellurium oxides also have attracted interest as microwave dielectric materials. Most TeO₂-based binary and ternary system have large negative temperature coefficient of resonant frequency (τ_f), which is not compatible for the low-temperature cofired ceramic. To compensate τ_f close to zero, two single-phase predecessors of BaTe₄O₉ and TiTe₃...

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