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We investigate the response of a GaN microelectromechanical resonator where the strain detection is performed by a resonant high-electron mobility transistor (R-HEMT). The R-HEMT gate located above the 2-DEG (two-dimensional electron gas) appears to enable a strong control of the electromechanical response with a gate voltage dependence close to a transconductance pattern. A quantitative approach...
This paper reports on the description of a new high force-resolution microgripper with large jaw displacement, electrostatically actuated by a comb-drive and instrumented with an integrated differential capacitive displacement sensor. This microgripper has been non-intuitively designed using a multi-objective optimization method, to reach the best compromise between chosen performance criteria. It...
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