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While the material and process technologies for SiC devices are becoming steadily more mature, the predictive simulation of SiC devices still lacks the availability of accurately calibrated physical device models. Basically it is feasible to adopt the physical models describing silicon devices for the analysis of SiC devices, but it is indispensable to recalibrate the model parameters. A reliable...
The interpretation and evaluation of free carrier absorption experiments on SiC devices is essentially supported by computer simulations of the measurement process, which exploits the physical effect that the light absorption coefficient in a semiconductor depends on the electron and hole concentrations. Hence, the attenuation of a laser beam transmitted through a sample is an integral function of...
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