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This paper investigates the RF reliability of SiGe HBT cascode driver amplifiers. By subtracting capacitive currents internal to the common-base device from its collector waveform, a more accurate depiction of electrical stress in the I-V plane is achieved, and from this revised load line, RF stress data is better correlated to DC stress data. This novel analysis technique provides a framework for...
We present here wide temperature range compact modeling of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) based on Most EXquisite TRAnsistor Model (Mextram). Various modifications and extensions are made to enable modeling of DC characteristics from 43-393 K, and AC characteristics from 93-393 K.
A new method is introduced to investigate electron transport in the collector-base space charge region of SiGe HBTs designed for half-Terahertz speeds. Using commercially-available Monte Carlo and hydrodynamic TCAD tools, one can eliminate the fundamental limitations of hydrodynamic models related to velocity overshoot and impact ionization. The method is verified in a 200-GHz SiGe technology and...
A new method for two-dimensional (2-D) regional transit time analysis in SiGe HBTs is presented, using a commercially-available TCAD suite with hydrodynamic device simulations. The quasi-static 2-D transit time analysis is first used to determine the cutoff frequency of a well-calibrated 200 GHz SiGe HBT and then applied to the design of hypothetical SiGe HBTs with peak cutoff frequencies of 375 GHz...
A SiGe sub-harmonic down-conversion mixer using a novel active anti-parallel diode pair is presented for millimeter-wave applications. The proposed architecture can help reduce conversion loss and also lower the required local oscillator power. With an LO power of 0 dBm, the measured 2times conversion gain varies from -5 to -7.8 dB in the 50 to 65 GHz range. Compared to earlier reports of millimeter-wave...
Germanium MOS capacitors with a thin high-k (ZrO 2 ) dielectric (EOT 2.2nm) were fabricated on epitaxial strained-Ge grown on relaxed-SiGe substrates. Strained-Ge material parameters were extracted from the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of MOS capacitors and were used in the simulation of strained-Ge channel p-MOSFETs with high-k gate dielectric. The simulated...
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