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Gd-doped silica and phosphosilicate fibers were pulled from preforms fabricated using the rod-in-tube technique and the solution doping technique, respectively. Ultraviolet (UV)-B luminescence from trivalent Gd at around 312 nm given by transition from first excited state to ground state were observed under deep UV excitations.
Enhancement of photoluminescence (PL) of Gd3+-doped silica glass densified by rapid thermal treatment (RTT) in the ultraviolet (UV) is investigated. The strong emission at 314 nm is assigned to the 6P7/2 to 8S7/2 transition under excitation of 6Dj, 6Ij, and 6Pj energy levels of the Gd3+. Significant decrease of the loss covering the UV band is observed.
Summary form only given. We discuss the growth and optical properties of InGaAs/GaAs self assembled quantum posts (QPs). The MBE grown QP is formed of a seed quantum dot (QD) connected to a short quantum wire and is capped by another QD. The QP length along the growth direction can be adjusted between 10 and 60 nm. We briefly discuss the QP structural and chemical composition. Their optical properties...
We discuss a novel optical assessment of dry etch damage, with high degree of sensitivity, by measuring the microdisk resonator Q. Effects of etch gas composition, bias power and sample preparation (resist reflow) were examined
InAs quantum dots have been grown by solid source molecular beam epitaxy on different matrix to investigate the effect on the structure and optical properties. High density of 1.02x10 11 cm -2 of InAs islands on In 0.15 Ga 0.85 As and In 0.15 Al 0.85 As underlying layer has been achieved...
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