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Charge-based and surface-potential-based models for undoped surrounding gate MOSFETs are compared from the aspect of their different accuracy. It has been identified that surface-potential-based models have superior accuracy near the threshold voltage. By including an additional charge density correction, the charge-based equations can be enhanced to achieve similar accuracy as the surface-potential-based...
A leading edge 45 nm CMOS system-on-chip (SOC) technology using Hafnium-based high-k/metal gate transistors has been optimized for low power products. PMOS/NMOS logic transistor drive currents of 0.86/1.08 mA/um, respectively, have been achieved at 1.1 V and off-state leakage of 1 nA/um. Record RF performance for a mainstream 45 nm bulk CMOS technology has been achieved with measured fT/fMAX values...
In this paper, a carrier-based modelling approach (CBMA) is extended to develop a unified compact model for the symmetric double-gate (DG) and surrounding-gate (SRG) MOS transistors with the same mathematic formulation via the parameter transformation. The unified model formulation makes it easy to handle different device structures with different physical solutions, avoiding the need to solve the...
This paper reviews present compact model development and outlines the main features of the PUNSIM, an advanced surface potential-based MOSFET model. The PUNSIM is developed to overcome mainly drawbacks of the traditional surface potential based models and aiming at fulfilling the features: The first-principle derivation of the complete MOSFET surface potential equation; Physics based analytic solution...
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