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Abstract Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5m/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical valence of 6.30.5 elementary charge per SiC molecule was determined. At p-n junctions (p-type layer on a n-type 6H-SiC substrate) a selective etching...