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A new sub-1-ppm/°C curvature-compensated bandgap voltage reference (BGR) is presented in this paper. The Complementary to Absolute Temperature (CTAT) voltage component of a forward biased BJT is first well balanced with a Proportional to Absolute Temperature (PTAT) voltage, leaving only a high order logarithmic error with the form of TlnT. This residual non-linear error is corrected by a difference...
Porous silicon (PSi) nanostructures are extremely important for all-silicon-based optoelectronic devices as well as addressable magnetic storage devices. In this paper, the authors fabricated highly ordered nanopore arrays on Si substrate by using focused ion beam (FIB) prepatterning on aluminum mask and subsequent ion mill pattern transfer from the anodized AAO template. With FIB prepatterning, it...
Aluminum nitride (AlN) thin film bulk acoustic resonator was fabricated using silicon bulk micromachining technique with highly c-axis oriented piezoelectric cell. AlN piezoelectric films were deposited on both platinum (Pt) and gold (Au) bottom electrodes under optimized sputtering condition for comparison. The measurement results of X-ray diffraction, scanning electron microscope, and atomic force...
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