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We investigated the dependence of temperature uniformity dufing millisecond annealing (MSA) on the pattern density and its effect on device characteristics and static random access memory (SRAM) yields with 45-nm node technology. By comparing flash lamp annealing (FLA) and laser spike annealing (LSA), we found FLA was difficult to use in our multiple MSA scheme without absorbing layers because of...
This paper review our developed junction profile engineering technique that uses millisecond annealing (MSA): MSA is implemented prior to spike- RTA to modulate the junction profile. With this technique, we can improve the performance of MOSFETs more effectively than conventional techniques. In addition, it enables us to use lower MSA temperatures with wide process window because of its low sensitivity...
We report, for the first time, a detailed study of the 100 mum-scaled emissivity and temperature variation in millisecond annealing (MSA) depending on the Si trench structure, the shallow trench isolation (STI) structure, and transistor structure measured by Thermawave method. Flash lamp annealing (FLA) was applied as MSA technique. In case of Si trench structure with varying the trench depth, the...
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