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We report an experimental and modeling study of ZnSySe1−y/GaAs (001) structures, all of which comprised a uniform top layer of ZnS0.014Se0.986 grown on a compositionally graded buffer layer or directly on the GaAs substrate. High-resolution x-ray diffraction was used to estimate dislocation densities on type A slip systems, with misfit dislocation (MD) line segments oriented along the $$ [1\bar{1}0]...